SSF3022D ? silikron semiconductor co.,ltd 2008.11.13 version : 1.0 page 1of5 absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 60 i d @t c =100 ? c continuous drain current,vgs@10v 50 i dm pulsed drain current 240 a p d @t c =25 ? c power dissipation 100 w linear derating factor 2.0 w/ ? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 240 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range ?55 to +150 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 1.25 ? r ja junction-to-ambient ? ? 62.5 ? c/w electrical characteristics @tj=25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 16 22 m ? v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 3.0 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance - 58 ? s v ds =5v,i d =30a ? ? 1 v ds =100v,v gs =0v i dss drain-to-source leakage current ? ? 10 a v ds =100v, v gs =0v,t j =150 ? c i gss gate-to-source forward leakage ? ? 100 na v gs =20v SSF3022D top view (dpak) id =60a bv=100v rdson=22mohm feathers: ? advanced trench process technology ? ultra low rdson, typical 16mohm ? high avalanche energy, 100% test ? fully characterized avalanche voltage and current description: the ssf3022 is a new generation of middle voltage and high current n?channel enhancement mode trench power mosfet. this new technology in creases the dev ice reliability and electrical parameter repeatability. ssf3022 is assembled in high reliability and qualified assembly house. application: ? power switching application
SSF3022D gate-to-source reverse leakage ? ? -100 v gs =-20v q g total gate charge ? 90 ? q gs gate-to-source charge ? 14 ? q gd gate-to-drain("miller") charge ? 24 ? nc i d =30a v dd =30v v gs =10v t d(on) turn-on delay time ? 18.2 ? t r rise time ? 15.6 ? t d(off) turn-off delay time ? 70.5 ? t f fall time ? 13.8 ? ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v c iss input capacitance ? 3150 ? c oss output capacitance ? 300 ? c rss reverse transfer capacitance ? 240 ? pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) ? ? 60 i sm pulsed source current . (body diode) ? ? 240 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =30a,v gs =0v t rr reverse recovery time 57 ? ns q rr reverse recovery charge 107 ? nc t j =25 ? c,i f =60a di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, id = 40a, vdd = 50v pulse width 300 s, duty cycle 1.5% ; rg = 25 ??? starting tj = 25c bv dss gate charge test circuit eas test circuit ? silikron semiconductor co.,ltd 2008.11.13 version : 1.0 page 2of5
SSF3022D ? silikron semiconductor co.,ltd 2008.11.13 version : 1.0 page 3of5 switch time test circuit switch waveforms: transfer characteristic capacitance: on resistance vs junction temperature breakdown voltage vs junction temperature
SSF3022D source-drain diode forward voltage gate charge max drain current vs junction temperature safe operation area transient thermal impedance curve ? silikron semiconductor co.,ltd 2008.11.13 version : 1.0 page 4of5
SSF3022D dpak mechanical data: ? silikron semiconductor co.,ltd 2008.11.13 version : 1.0 page 5of5
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